Question -
Answer -
Energy gap of the given intrinsicsemiconductor, Eg =1.2 eV
Thetemperature dependence of the intrinsic carrier-concentration is written as:
Where,
kB =Boltzmann constant = 8.62 × 10−5 eV/K
T =Temperature
n0 =Constant
Initial temperature, T1 =300 K
Theintrinsic carrier-concentration at this temperature can be written as:
Final temperature, T2 =600 K
Theintrinsic carrier-concentration at this temperature can be written as:
… (2)
The ratiobetween the conductivities at 600 K and at 300 K is equal to the ratio betweenthe respective intrinsic carrier-concentrations at these temperatures.
Therefore, the ratio between the conductivitiesis 1.09 × 105.